DFB laser diodes at 1278.8 nm are used for hydrogen fluoride detection. Please have a look at the key features, specifications and applications.
parameters
|
symbol
|
unit
|
minimum
|
typical
|
maximum
|
---|---|---|---|---|---|
parameters
operating wavelength (at Top, Iop) |
symbol
λop |
unit
nm |
minimum
|
typical
1278.8 |
maximum
|
parameters
optical output power (at λop) |
symbol
Pop |
unit
mW |
minimum
|
typical
20 |
maximum
|
parameters
operating current |
symbol
Iop |
unit
mA |
minimum
|
typical
70 |
maximum
|
parameters
operating voltage |
symbol
Vop |
unit
V |
minimum
|
typical
2 |
maximum
|
parameters
threshold current |
symbol
Ith |
unit
mA |
minimum
12 |
typical
15 |
maximum
25 |
parameters
side mode suppression ratio |
symbol
SMSR |
unit
dB |
minimum
|
typical
> 35 |
maximum
|
parameters
current tuning coefficient |
symbol
CI |
unit
nm / mA |
minimum
0.007 |
typical
0.01 |
maximum
0.02 |
parameters
temperature tuning coefficient |
symbol
CT |
unit
nm / K |
minimum
0.07 |
typical
0.09 |
maximum
0.1 |
parameters
operating chip temperature |
symbol
Top |
unit
°C |
minimum
+20 |
typical
+25 |
maximum
+50 |
parameters
operating case temperature (non-condensing) |
symbol
TC |
unit
°C |
minimum
-20 |
typical
+25 |
maximum
+50 |
parameters
storage temperature (non-condensing) |
symbol
TS |
unit
°C |
minimum
-40 |
typical
+20 |
maximum
+80 |
nanoplus distributed feedback lasers show outstanding spectral, tuning and electrical properties.
Typical spectrum of a nanoplus 1279 nm distributed feedback laser diode
Typical mode hop free tuning of a nanoplus 1279 nm distributed feedback laser diode
Typical power, current and voltage characteristics of a nanoplus 1279 nm distributed feedback laser diode
nanoplus uses a unique and patented technology for DFB laser manufacturing. We apply a lateral metal grating along the ridge waveguide, which is independent of the material system. Read more about our patented distributed feedback technology.